Datasheet4U Logo Datasheet4U.com

2SK975 - Silicon N-Channel MOS FET

Features

  • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source.
  • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-92 Mod D G 32 1 1. Source 2. Drain 3. Gate S 2SK975 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel te.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK971 N-Channel MOSFET Transistor Inchange Semiconductor
2SK972 N-Channel MOSFET Transistor Inchange Semiconductor
2SK973L N-Channel MOSFET Transistor Inchange Semiconductor
2SK973S N-Channel MOSFET Transistor Inchange Semiconductor
2SK974L N-Channel MOSFET INCHANGE

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SK971 Silicon N-Channel MOSFET
2SK972 Silicon N-Channel MOSFET
2SK973 Silicon N-Channel MOSFET
2SK973L Silicon N-Channel MOSFET
2SK973S Silicon N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
2SK975 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-92 Mod D G 32 1 1. Source 2. Drain 3. Gate S 2SK975 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% Symbol VDSS VGSS ID I D(pulse)* I DR Pch Tch Tstg 1 Ratings 60 ±20 1.5 4.5 1.
Published: |