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2SK3080 - N-Channel MOSFET

Key Features

  • Low on-resistance R DS(on) = 20 mΩ typ. (V GS = 10V, ID = 15 A).
  • 4V gate drive devices.
  • High speed switching Outline TO.
  • 220AB D G 1 2 S 3 1. Gate 2. Drain(Flange) 3. Source 2SK3080 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings 30 ±20 30 120 30 Unit V V A A A W °C °C Body-drain diode reverse drain current I DR Channel dissipation Ch.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK3080 Silicon N Channel MOS FET High Speed Power Switching ADE-208-635A (Z) 2nd. Edition May 1998 Features • Low on-resistance R DS(on) = 20 mΩ typ. (V GS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain(Flange) 3. Source 2SK3080 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings 30 ±20 30 120 30 Unit V V A A A W °C °C Body-drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: Pch Tch Tstg Note2 50 150 –55 to +150 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C Electrical Characteristics (Ta = 25°C) Item Symbol Min 30 ±20 — — 1.