Datasheet Summary
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-635A (Z) 2nd. Edition May 1998 Features
- Low on-resistance R DS(on) = 20 mΩ typ. (V GS = 10V, ID = 15 A)
- 4V gate drive devices.
- High speed switching
Outline
TO- 220AB
1 2 S 3
1. Gate 2. Drain(Flange) 3....