2SK2958 - Silicon N Channel MOS FET

Hitachi Semiconductor

Datasheet Details

Low on-resistance R DS(on) = 5.5mΩ typ.
4V gate drive devices.
High speed switching Outline LDPAK 4 D 4 1 G 1 2 3 2 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK2958(L),2SK2958(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C S.

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Hitachi Semiconductor 2SK2958-like datasheet

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