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2SK2553L - N-Channel MOSFET

Features

  • Low on-resistance R DS(on) = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK2553(L), 2SK2553(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SK2553 N-Channel MOSFET
2SK2553S Silicon N Channel MOS FET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK2553(L), 2SK2553(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-357H (Z) 9th. Edition February 1999 Application High speed power switching Features • • • • Low on-resistance R DS(on) = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK2553(L), 2SK2553(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C 3.
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