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2SK1623(L), 2SK1623(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
LDPAK 4 4
1 2 1 D G 2 3
3
S
1. Gate 2. Drain 3. Source 4. Drain
2SK1623(L), 2SK1623(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.
2SK1623S Datasheet
