Datasheet4U Logo Datasheet4U.com

2SK1338 - Silicon N-Channel MOSFET

Key Features

  • Low on-resistance.
  • High speed switching.
  • Low drive current.
  • No secondary breakdown.
  • Suitable for switching regulator and DC-DC converter Outline TO-220AB ADE-208-1275 (Z) 1st. Edition Mar. 2001 D 123 1. Gate G 2. Drain (Flange) 3. Source S 2SK1338 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel te.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK1338 N-Channel MOSFET INCHANGE
2SK1338 Silicon N-Channel MOSFET Renesas
2SK1330 N-Channel MOSFET Transistor Inchange Semiconductor
2SK1330A N-Channel MOSFET Transistor Inchange Semiconductor
2SK1331 N-Channel MOSFET Transistor Inchange Semiconductor

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SK133 Silicon N-Channel MOSFET
2SK1334 Silicon N-Channel MOSFET
2SK1335 Silicon N-Channel MOSFET
2SK1335L Silicon N-Channel MOSFET
2SK1335S Silicon N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SK1338 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline TO-220AB ADE-208-1275 (Z) 1st. Edition Mar. 2001 D 123 1. Gate G 2. Drain (Flange) 3. Source S 2SK1338 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 µs, duty cycle 1% 2.