Key Features
- Low on-resistance R DS(on) = 0.3 Ω typ.
- Low drive current
- 4 V gete drive devices
- High speed switching Outline DPAK-1 4 4
- 1 2 G 3 S 1 2 3
- Drain
- Source
Datasheets by Manufacturer
- 2SJ527L — Renesas — P-Channel MOSFET
- 2SJ527 — Renesas — P-Channel MOSFET
- 2SJ527S — Kexin Semiconductor — Hight Speed Power Switching
- 2SJ527S — Renesas — P-Channel MOSFET
- J525 — Toshiba — 2SJ525
- 2SJ520 — SANYO — P-Channel MOSFET
- 2SJ529S — Kexin Semiconductor — Hight Speed Power Switching
- 2SJ526 — Inchange Semiconductor — P-Channel MOSFET
- 2SJ529S — VBsemi — P-Channel 60V MOSFET
- 2SJ528S — Kexin Semiconductor — Hight Speed Power Switching