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2SJ527(L),2SJ527(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-640A (Z) 2nd. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.3 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching
Outline
DPAK-1
4
4
D 1 2 G 3
S
1 2
3
1. Gate 2. Drain 3. Source 4. Drain
2SJ527(L),2SJ527(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note3 Note3 Note2 Note1
Ratings –60 ±20 –5 –20 –5 –5 2.1 20 150 –55 to +150
Unit V V A A A A mJ W °C °C
EAR
Pch Tch
Tstg
1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.
2SJ527L Datasheet
