Click to expand full text
2SJ317
Silicon P-Channel MOS FET
Application
High speed power switching Low voltage operation
Features
• Very low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc.
Outline
UPAK 2 1 4 D 1. Gate 2. Drain 3. Source 4. Drain S
3
G
2SJ317
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings –12 –7 ±2 ±4 2 1 150 –55 to +150
Unit V V A A A W °C °C
Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10% 2. Value on the alumina ceramic board (12.5×20×0.7 mm). 3. Marking is “NY”.
2SJ317 Datasheet
