2SJ291 Datasheet Text
Silicon P-Channel MOS FET
November 1996
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Application
High speed power switching
Features
- -
- -
- - Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings
Outline
TO-220AB
D G
1
2
3 1. Gate 2. Drain (Flange) 3....