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2SJ244 - P-Channel MOSFET

Key Features

  • Very Low on-resistance.
  • High speed switching.
  • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc. Outline UPAK 2 1 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 G 2SJ244 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse).
  • Pch.
  • Tch Tstg 2 1 Ratings.
  • 12 ±7 ±.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SJ245 Silicon P-Channel MOS FET
2SJ245L Silicon P-Channel MOS FET
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2SJ246 SILICON P-CHANNEL MOS FET
2SJ247 P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SJ244 Silicon P-Channel MOS FET Application High speed power switching Low voltage operation Features • Very Low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc. Outline UPAK 2 1 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 G 2SJ244 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* Pch* Tch Tstg 2 1 Ratings –12 ±7 ±2 ±4 1 150 –55 to +150 Unit V V A A W °C °C Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10% 2. Value on the alumina ceramic board (12.5×20×0.7 mm) 3. Marking is “JY”.