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2SD1974
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
UPAK
1 3 2
1
2, 4
4
ID
1. Base 2. Collector 3. Emitter 4. Collector (Flange)
3
2SD1974
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current E to C diode forward current Collector power dissipation Junction temperature Storage temperature Note: Symbol VCBO VCEO VEBO IC ic (peak) ID PC * Tj Tstg
1
Ratings 25 25 6 0.8 1.5 0.6 1.0 150 –55 to +150
Unit V V V A A A W °C °C
1. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 25 25 25 6 — — — 250 — — Typ — — — — — — — — — — Max — 35 35 — 0.2 0.
2SD1974 Datasheet
