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2SC5057 - Silicon NPN Triple Diffused Planar Transistor

Features

  • High breakdown voltage VCBO = 1700 V Outline TO-3PL 1 2 3 1. Base 2. Collector 3. Emitter 2SC5057 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector surge current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC IC(surge) PC.
  • 1 Tj Tstg Ratings 1700 900 6 20 25 200 150.
  • 55 to +150 Unit V V V A A W °C.

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Full PDF Text Transcription (Reference)

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2SC5057 Silicon NPN Triple Diffused Planar Application HDTV horizontal deflection output Features • High breakdown voltage VCBO = 1700 V Outline TO-3PL 1 2 3 1. Base 2. Collector 3. Emitter 2SC5057 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector surge current Collector power dissipation Junction temperature Storage temperature Note: 1.
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