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Hitachi Power Semiconductor Device Electronic Components Datasheet

2SC4900 Datasheet

NPN TRANSISTOR

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2SC4900
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
High gain bandwidth product
fT = 9 GHz Typ
High gain, low noise figure
PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz
Outline
MPAK-4
2
3
1
4
1. Collector
2. Emitter
3. Base
4. Emitter


Hitachi Power Semiconductor Device Electronic Components Datasheet

2SC4900 Datasheet

NPN TRANSISTOR

No Preview Available !

2SC4900
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
15
9
1.5
50
150
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Power gain
Symbol Min
V(BR)CBO
15
I CBO
I CEO
I EBO
hFE
Cob
fT
PG
50
6.0
10.5
Noise figure
NF —
Note: Marking is “YJ–”.
Typ
120
0.8
9.0
13.5
1.2
Max
10
1
10
250
1.3
2.5
Unit
V
µA
mA
µA
pF
GHz
dB
dB
Test conditions
IC = 10 µA, IE = 0
VCB = 12 V, IE = 0
VCE = 9 V, RBE =
VEB = 1.5 V, IC = 0
VCE = 5 V, IC = 20 mA
VCB = 5 V, IE = 0, f = 1 MHz
VCE = 5 V, IC = 20 mA
VCE = 5 V, IC = 20 mA,
f = 900 MHz
VCE = 5 V, IC = 5 mA,
f = 900 MHz
2


Part Number 2SC4900
Description NPN TRANSISTOR
Maker Hitachi Semiconductor
Total Page 8 Pages
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