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2SB1032(K)
Silicon PNP Triple Diffused
Application
Power switching complementary pair with 2SD1436(K)
Outline
TO-3P
2
1 1. Base 2. Collector (Flange) 3. Emitter ID 1.0 kΩ (Typ) 200 Ω (Typ) 3
1
2
3
2SB1032(K)
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current C to E diode forward current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC I C(peak) ID*
1 1
Rating –120 –120 –7 –10 –15 10 80 150 –55 to +150
Unit V V V A A A W °C °C
PC * Tj
Tstg
Electrical Characteristics (Ta = 25°C)
Item Symbol Min –120 –7 — — 1000 — — — — — — — Typ — — — — — — — — — — 0.8 4.0 Max — — –100 –10 20000 –1.5 –3.0 –2.0 –3.