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HN58V66A - 64k EEPROM (8-kword x 8-bit) Ready/Busy function

This page provides the datasheet information for the HN58V66A, a member of the HN58V65A 64k EEPROM (8-kword x 8-bit) Ready/Busy function family.

Datasheet Summary

Description

The Hitachi HN58V65A series and HN58V66A series are a electrically erasable and programmable EEPROM’s organized as 8192-word × 8-bit.

They have realized high speed, low power consumption and high relisbility by employing advanced MNOS memory technology and CMOS process and circuitry technology.

Features

  • Single supply: 2.7 to 5.5 V.
  • Access time:  100 ns (max) at 2.7 V ≤ VCC < 4.5 V  70 ns (max) at 4.5 V ≤ VCC ≤ 5.5 V.
  • Power dissipation:  Active: 20 mW/MHz (typ)  Standby: 110 µW (max).
  • On-chip latches: address, data, CE, OE, WE.
  • Automatic byte write: 10 ms (max).
  • Automatic page write (64 bytes): 10 ms (max).
  • Ready/Busy.
  • Data polling and Toggle bit.
  • Data protection circuit on power on/off.
  • Confo.

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Datasheet preview – HN58V66A

Datasheet Details

Part number HN58V66A
Manufacturer Hitachi
File Size 127.73 KB
Description 64k EEPROM (8-kword x 8-bit) Ready/Busy function
Datasheet download datasheet HN58V66A Datasheet
Additional preview pages of the HN58V66A datasheet.

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Full PDF Text Transcription

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HN58V65A Series HN58V66A Series 64 k EEPROM (8-kword × 8-bit) Ready/Busy function, RES function (HN58V66A) ADE-203-539B (Z) Rev. 2.0 Nov. 1997 Description The Hitachi HN58V65A series and HN58V66A series are a electrically erasable and programmable EEPROM’s organized as 8192-word × 8-bit. They have realized high speed, low power consumption and high relisbility by employing advanced MNOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster. Features • Single supply: 2.7 to 5.5 V • Access time:  100 ns (max) at 2.7 V ≤ VCC < 4.5 V  70 ns (max) at 4.5 V ≤ VCC ≤ 5.
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