BB102C Datasheet (Hitachi Semiconductor)

Key Features

• Build in Biasing Circuit; To reduce using parts cost & PC board space
• Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz)
• Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions
• Note 1 Marking is “BW–”
• Note 2 BB302C is individual type number of HITACHI BBFET. BB102C