BB101C - Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features

Build in Biasing Circuit; To reduce using parts cost & PC board space.
Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz).
Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Outline CMPAK.
4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain BB101C Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipat.

Hitachi

Datasheet Details

Part number	BB101C
Manufacturer	Hitachi
File Size	48.22 KB
Description	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Datasheet	BB101C Datasheet
Additional preview pages of the BB101C datasheet.

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Full PDF Text Transcription

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BB101C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-505 1st. Edition Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Outline CMPAK–4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4.

Published: Jun 3, 2005 |