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2SJ296 - Silicon P-Channel MOSFET

Hitachi Semiconductor (now Renesas)

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2SJ296 silicon p-channel mosfet by Hitachi Semiconductor (now Renesas) - Datasheet Preview

Datasheet Details

Part number	2SJ296
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	50.58 KB
Description	Silicon P-Channel MOSFET
Datasheet	2SJ296 Datasheet

Overview

www.DataSheet4U.com 2SJ296(L), 2SJ296(S) Silicon P-Channel MOS FET November 1996 Application High speed power.

Key Features

Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain www. DataSheet4U. com 2SJ296(L), 2SJ296(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode r.

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