2SC5237
2SC5237 is Silicon NPN Epitaxial Type Transistor manufactured by Hitachi Semiconductor.
Features
- Excellent high frequency characteristics f T = 400 MHz typ
- High voltage and low output capacitance VCEO = 250 V, Cob = 3.5 p F typ
- Suitable for wide band video amplifier
Outline
TO-126FM
1. Emitter 2. Collector 3. Base
Free Datasheet http://../
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC IC(peak) PC Tj Tstg Ratings 250 250 3 150 300 1.4 8- Junction temperature Storage temperature Note: 1. TC = 25°C
Unit V V V m A m A W
- 55 to +150
°C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 250 250
- -
Typ
- -
- -
- -
- 400 3.5
Max
- - 1.0 10 200 1.0 1.0
- 5.0
Unit V V µA µA
- V V MHz p F
Test conditions IC = 10 µA, IE = 0 IC = 1 m A, RBE = ∞ VCB = 200 V, IE = 0 VEB = 3 V, IC = 0 VCE = 10 V, IC = 10 m A VCE = 10 V, IC = 50 m A IC = 50 m A, IB = 5 m A VCE = 30 V, IC = 50 m A VCB = 30 V, IE = 0, f = 1 MHz
Collector to emitter breakdown V(BR)CEO voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Note: ICBO IEBO h FE- VBE VCE(sat) f T Cob
- - 300
- 1. The 2SC2537 is grouped by h FE and its specification is as follows.
B 60 to 120
C 100 to...
