2SC5219 transistor equivalent, silicon npn triple diffused planar transistor.
* High breakdown voltage VCES = 1700 V
* High speed switching tf = 0.15 µsec (typ)
* Built-in damper diode type
* Isolated package TO-3P
*FM
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T.
based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other .
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