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HSD965 - NPN Transistor

This page provides the datasheet information for the HSD965, a member of the HSD965_Hi NPN Transistor family.

Datasheet Summary

Description

The HSD965 is suited for use as AF output amplifier and flash unit.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) 750 mW Maximum

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Datasheet Details

Part number HSD965
Manufacturer Hi-Sincerity Mocroelectronics
File Size 47.56 KB
Description NPN Transistor
Datasheet download datasheet HSD965 Datasheet
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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HSD965 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6537 Issued Date : 1992.11.25 Revised Date : 2004.11.30 Page No. : 1/4 Description The HSD965 is suited for use as AF output amplifier and flash unit. Absolute Maximum Ratings TO-92 • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ..................................................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ...............................................................................................................
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