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Hi-Sincerity Mocroelectronics

HSD965 Datasheet Preview

HSD965 Datasheet

NPN EPITAXIAL PLANAR TRANSISTOR

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HI-SINCERITY
MICROELECTRONICS CORP.
HSD965
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6537
Issued Date : 1992.11.25
Revised Date : 2004.11.30
Page No. : 1/4
Description
The HSD965 is suited for use as AF output amplifier and flash unit.
Absolute Maximum Ratings
TO-92
Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150 °C
Junction Temperature ..................................................................................................................... 150 °C Maximum
Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ............................................................................................................... 750 mW
Maximum Voltages and Currents (TA=25°C)
VCBO Collector to Base Voltage ........................................................................................................................... 40 V
VCEO Collector to Emitter Voltage ........................................................................................................................ 20 V
VEBO Emitter to Base Voltage ................................................................................................................................ 7 V
IC Collector Current (Continuous) .......................................................................................................................... 5 A
IC Collector Current (Peak PT=10mS) .................................................................................................................... 8 A
Electrical Characteristics (TA=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE1
*hFE2
fT
Cob
Min.
40
20
7
-
-
-
230
150
-
-
Typ.
-
-
-
-
-
0.35
-
-
150
-
Max.
-
-
-
0.1
0.1
1
800
-
-
50
Classification Of hFE
Rank
Range
Q
230-380
Unit
V
V
V
uA
uA
V
MHz
pF
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=10V, IE=0
VEB=7V, IC=0
IC=3A, IB=100mA
VCE=2V, IC=0.5A
VCE=2V, IC=2A
VCE=6V, IE=50mA
VCB=20V, f=1MHz, IE=0
*Pulse Test: Pulse Width 380us, Duty Cycle2%
R
340-600
S
560-800
HSD965
HSMC Product Specification




Hi-Sincerity Mocroelectronics

HSD965 Datasheet Preview

HSD965 Datasheet

NPN EPITAXIAL PLANAR TRANSISTOR

No Preview Available !

HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6537
Issued Date : 1992.11.25
Revised Date : 2004.11.30
Page No. : 2/4
10000
Current Gain & Collector Current
1000
100
125oC
25oC
75oC
hFE @ VCE=2V
10
10
100 1000
Collector Current-IC (mA)
10000
Saturation Voltage & Collector Current
1000
VCE(sat) @ IC=30IB
100
75oC
125oC
25oC
10
1
10 100 1000
Collector Current-IC (mA)
10000
Capacitance & Reverse-Biased Voltage
100
Cob
10
Cutoff Frequency & Collector Current
1000
100 VCE=6V
10
1
0.1
10000
1000
100
10
1
1
HSD965
1 10
Reverse-Biased Voltage (V)
Safe Operating Area
100
PT=1ms
PT=100ms
PT=1s
10
Forward Biased Voltage-VCE (V)
100
1
1
800
700
600
500
400
300
200
100
0
0
10 100
Collector Current-IC (mA)
Power Derating
1000
50 100 150
Ambient Temperature-Ta (oC)
200
HSMC Product Specification


Part Number HSD965
Description NPN EPITAXIAL PLANAR TRANSISTOR
Maker Hi-Sincerity Mocroelectronics
Total Page 4 Pages
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