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HSD879 - SILICON NPN EPITAXIAL TYPE TRANSISTOR

Download the HSD879 datasheet PDF. This datasheet also covers the HSD879_Hi variant, as both devices belong to the same silicon npn epitaxial type transistor family and are provided as variant models within a single manufacturer datasheet.

Description

For 1.5V and 3v electronic flash use.

Features

  • Charger-up time is about 1 ms faster than of a germanium transistor.
  • Small saturation voltage can bring less power dissipation and flashing times TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 750 mW.
  • Maximum Voltages and Currents (TA=25°C) BVCBO Collector t.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HSD879_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HSD879
Manufacturer Hi-Sincerity Mocroelectronics
File Size 45.78 KB
Description SILICON NPN EPITAXIAL TYPE TRANSISTOR
Datasheet download datasheet HSD879 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HSD879 SILICON NPN EPITAXIAL TYPE TRANSISTOR Spec. No. : HA200207 Issued Date : 1996.07.15 Revised Date : 2005.02.15 Page No. : 1/4 Description For 1.5V and 3v electronic flash use. Features • Charger-up time is about 1 ms faster than of a germanium transistor • Small saturation voltage can bring less power dissipation and flashing times TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ...................................................................................................................
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