Download the HSD879 datasheet PDF.
This datasheet also covers the HSD879_Hi variant, as both devices belong to the same silicon npn epitaxial type transistor family and are provided as variant models within a single manufacturer datasheet.
Description
For 1.5V and 3v electronic flash use.
Features
- Charger-up time is about 1 ms faster than of a germanium transistor.
- Small saturation voltage can bring less power dissipation and flashing times
TO-92
Absolute Maximum Ratings.
- Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
- Maximum Power Dissipation Total Power Dissipation (TA=25°C) 750 mW.
- Maximum Voltages and Currents (TA=25°C) BVCBO Collector t.