Datasheet4U Logo Datasheet4U.com

HI882 - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HI882, a member of the HI882_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Description

The HI882 is designed for using in output stage of 10 W audio amplifier, voltage regulator, DC-DC converter and relay driver.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Power Dissipati

📥 Download Datasheet

Datasheet preview – HI882

Datasheet Details

Part number HI882
Manufacturer Hi-Sincerity Mocroelectronics
File Size 72.35 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HI882 Datasheet
Additional preview pages of the HI882 datasheet.

📁 Similar Datasheet

  • Hi8000 - Boost Constant Voltage Control Driver (Hichips)
  • HI80D-103 - Ultra-Precision High-Power High-Voltage Resistors (Token)
  • HI80D-124 - Ultra-Precision High-Power High-Voltage Resistors (Token)
  • HI80D-154 - Ultra-Precision High-Power High-Voltage Resistors (Token)
  • HI80D-20 - Ultra-Precision High-Power High-Voltage Resistors (Token)
  • HI80D-26 - Ultra-Precision High-Power High-Voltage Resistors (Token)
  • HI80D-32 - Ultra-Precision High-Power High-Voltage Resistors (Token)
  • HI80D-39 - Ultra-Precision High-Power High-Voltage Resistors (Token)
  • HI80D-52 - Ultra-Precision High-Power High-Voltage Resistors (Token)
  • HI80D-78 - Ultra-Precision High-Power High-Voltage Resistors (Token)
Other Datasheets by Hi-Sincerity Mocroelectronics

    Full PDF Text Transcription

    Click to expand full text
    www.DataSheet4U.com HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9014 Issued Date : 1996.04.12 Revised Date : 2001.01.25 Page No. : 1/4 HI882 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI882 is designed for using in output stage of 10 W audio amplifier, voltage regulator, DC-DC converter and relay driver. Absolute Maximum Ratings (Ta=25°C) TO-251 • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) .....................................................................................
    Published: |