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H9926S Datasheet Hi-Sincerity Mocroelectronics

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Features and Benefits


• RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A
• High Density Cell Design for Ultra Low On-Resistance
• High Power and Current Handing Capability
• Fully Characterized Avalanche Voltag.

H9926S H9926S H9926S
TAGS
H9926S
Dual
N-Channel
Enhancement-Mode
MOSFET
H9926CS
H9926CTS
H9926S
Hi-Sincerity Mocroelectronics

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