* RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A
* High Density Cell Design for Ultra Low On-Resistance
* High Power and Current Handing Capabil.

with a www.DataSheet4U.com wide range of gate drive voltage (2.5V-10V) Q2 Q1 1 2 3 4 Pin 1: Drain 1 Pin 2 / 3: Sou.

This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a www.DataSheet4U.com wide range of gate drive voltage (2.5V-10V) Q2 Q1 1 2 3 4 Pin 1: Drain .

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