H9435S - P-Channel Enhancement-Mode MOSFET

Hi-Sincerity Mocroelectronics

Download the H9435S datasheet PDF. This datasheet also covers the H9435S_Hi variant, as both devices belong to the same p-channel enhancement-mode mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

RDS(on)=60mΩ@VGS=-10V, ID=-5.3A.
RDS(on)=90mΩ@VGS=-4.5V, ID=-4.2A.
Advanced Trench Process Technology.
High Density Cell Design for Ultra Low On-Resistance.
Fully Characterized Avalanche Voltage and Current.
Improved Shoot-Through FOM 5 6 7 8 4 3 2 1 Pin 1 / 2 / 3: Source Pin 4: Gate Pin 5 / 6 / 7 / 8: Drain Absolute Maximum Ratings (T =25 C, unless otherwise noted) o A Symbol VDS VGS ID IDM PD Tj, Tstg RθJC RθJA Drain-Source Voltage Ga.

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H9435S p-channel enhancement-mode mosfet by Hi-Sincerity Mocroelectronics - Datasheet Preview — Note: The manufacturer provides a single datasheet file (H9435S_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	H9435S
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	169.34 KB
Description	P-Channel Enhancement-Mode MOSFET
Datasheet	H9435S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

www.DataSheet4U.com HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200509 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 1/4 H9435S P-Channel Enhancement-Mode MOSFET (-30V, -5.3A) • 8-Lead Plastic SO-8 Package Code: S H9435S Symbol & Pin Assignment Features • RDS(on)=60mΩ@VGS=-10V, ID=-5.3A • RDS(on)=90mΩ@VGS=-4.5V, ID=-4.