H50N03E mosfet equivalent, n-channel mosfet.
* RDS(on)=11mΩ@VGS=10V, ID=30A
* RDS(on)=18mΩ@VGS=4.5V, ID=30A
* Advanced trench process technology
* High Density Cell Design for Ultra Low On-Resistance.
or systems.
* HSMC assumes no liability for any consequence of customer product design, infringement of patents, or.
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