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Hi-Sincerity Mocroelectronics

H4435S Datasheet Preview

H4435S Datasheet

P-Channel Enhancement-Mode MOSFET

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200101)
Issued Date : 2008.01.12
Revised Date :2009.02.06
Page No. : 1/5
H4435S
P-Channel Enhancement-Mode MOSFET (-30V, -9.1A)
8-Lead Plastic SO-8
Package Code: S
Features
RDS(on)=20mΩ@VGS=-10V, ID=-9.1A
RDS(on)=35mΩ@VGS=-4.5V, ID=-6.9A
Advanced trench process technology
High Density Cell Design for Ultra Low On-Resistance
H4435S Symbol & Pin Assignment
54
6 3 Pin 1 / 2 / 3: Source
Pin 4: Gate
7 2 Pin 5 / 6 / 7 / 8: Drain
81
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current (Continuous)
IDM Drain Current (Pulsed) *1
PD Total Power Dissipation @TA=25oC
Tj, Tstg
RθJA
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient (PCB mounted)*2
*1: Maximum DC current limited by the package
*2: 1-in2 2oz Cu PCB board
Ratings
-30
±20
-9.1
-50
2.5
-55 to +150
50
Units
V
V
A
A
W
°C
°C/W
H4435S
HSMC Product Specification
Free Datasheet http://www.datasheet4u.com/




Hi-Sincerity Mocroelectronics

H4435S Datasheet Preview

H4435S Datasheet

P-Channel Enhancement-Mode MOSFET

No Preview Available !

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200101)
Issued Date : 2008.01.12
Revised Date :2009.02.06
Page No. : 2/5
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
Static
BVDSS
Characteristic
Drain-Source Breakdown Voltage
RDS(on)
Drain-Source On-State Resistance
VGS(th)
Gate Threshold Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
gFS Forward Transconductance
Dynamic
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(on)
Turn-on Delay Time
tr Turn-on Rise Time
td(off)
Turn-off Delay Time
tf Turn-off Fall Time
Drain-Source Diode Characteristics
IS Maximum Diode Forward Current
VSD Drain-Source Diode Forward Voltage
Test Conditions
VGS=0V, ID=-250uA
VGS=-10V, ID=-9.1A
VGS=-4.5V, ID=-6.9A
VDS=VGS, ID=-250uA
VDS=-30V, VGS=0V
VGS=±20V, VDS=0V
VDS=-10V, ID=-9.1A
VDS=-24V, ID=-7.0A, VGS=-4.5V
VDS=-25V, VGS=0V, f=1MHz
VDD=-15V, RL=15Ω, ID=-1A,
VGEN=-10V, RG=3.3Ω
VGS=0V, IS=-2.1A
Note: Pulse Test: Pulse Width 300us, Duty Cycle2%
Min. Typ. Max. Unit
30 -
-V
- 15 20
mΩ
- 20 35
-1 - -3 V
- - -1 uA
- - ±100 nA
21 -
S
- 20 30
- 3.43 -
nC
- 11 -
- 1210 1720-
- 205 -
PF
- 195 -
- 10 -
- 7.0 -
Ns
- 45 -
- 35 -
- - -2.1 A
- - -1.2 V
H4435S
HSMC Product Specification
Free Datasheet http://www.datasheet4u.com/


Part Number H4435S
Description P-Channel Enhancement-Mode MOSFET
Maker Hi-Sincerity Mocroelectronics
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H4435S Datasheet PDF






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