H2N5366 Datasheet - Hi-Sincerity Mocroelectronics

H2N5366 PNP EPITAXIAL PLANAR TRANSISTOR

H2N5366 Features

* This device was designed for use as general purpose amplifier and switches. Absolute Maximum Ratings

* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum

* Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 400 mW

Datasheet Details

H2N5366

Hi-Sincerity Mocroelectronics

35.59 KB

Pnp epitaxial planar transistor.

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