H04N60 transistor equivalent, n-channel power field effect transistor.
* Higher Current Rating
* Lower RDS(on)
* Lower Capacitances
* Lower Total Gate Charge
* Tighter VSD Specifications
* Avalanche Energy Specified
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such as power suplies, converters, power motor controls and bridge circuits.
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3-Lead Plastic TO-220AB Package Code.
This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switch.
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