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HWL30YRA - L-Band GaAs Power FET

Datasheet Summary

Description

The HWL30YRA is a Medium Power GaAs FET designed for various L-band & S-band applications.

It is presently offered in low cost ceramic package.

Features

  • Low Cost GaAs Power FET.
  • Class A or Class AB Operation.
  • Typical 16.5 dB Gain.
  • 5V to 10V Operation.

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Datasheet preview – HWL30YRA

Datasheet Details

Part number HWL30YRA
Manufacturer Hexawave
File Size 86.62 KB
Description L-Band GaAs Power FET
Datasheet download datasheet HWL30YRA Datasheet
Additional preview pages of the HWL30YRA datasheet.

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Full PDF Text Transcription

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Features • Low Cost GaAs Power FET • Class A or Class AB Operation • Typical 16.5 dB Gain • 5V to 10V Operation Description The HWL30YRA is a Medium Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package. HWL30YRA L-Band GaAs Power FET Autumn 2002 V1 Outline Dimensions Absolute Maximum Ratings VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current IG Gate Current TCH Channel Temperature TSTG PT* Storage Temperature Power Dissipation * mounted on an infinite heat sink.
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