HWL30YRA - L-Band GaAs Power FET

General Description

The HWL30YRA is a Medium Power GaAs FET designed for various L-band & S-band applications.

It is presently offered in low cost ceramic package.

Key Features

Low Cost GaAs Power FET.
Class A or Class AB Operation.
Typical 16.5 dB Gain.
5V to 10V Operation.

📥 Download Datasheet

HWL30YRA l-band gaas power fet by Hexawave - Datasheet Preview

Datasheet Details

Part number	HWL30YRA
Manufacturer	Hexawave
File Size	86.62 KB
Description	L-Band GaAs Power FET
Datasheet	HWL30YRA Datasheet

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Other Datasheets by Hexawave

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features • Low Cost GaAs Power FET • Class A or Class AB Operation • Typical 16.5 dB Gain • 5V to 10V Operation Description The HWL30YRA is a Medium Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package. HWL30YRA L-Band GaAs Power FET Autumn 2002 V1 Outline Dimensions Absolute Maximum Ratings VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current IG Gate Current TCH Channel Temperature TSTG PT* Storage Temperature Power Dissipation * mounted on an infinite heat sink.