HWC27NC chip equivalent, c-band power fet non-via hole chip.
* Low Cost GaAs Power FET
* Class A or Class AB Operation
* 11 dB Typical Gain at 4 GHz
* 5V to 10V Operation
Description
The HWC27NC is a medium power G.
Absolute Maximum Ratings
VDS VGS ID IG TCH TSTG PT*
Drain to Source Voltage Gate to Source Voltage Drain Current Gat.
The HWC27NC is a medium power GaAs FET designed for various L-band & S-band applications.
Absolute Maximum Ratings
VDS VGS ID IG TCH TSTG PT*
Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Tem.
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