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AT41435 - AT-41435

Download the AT41435 datasheet PDF. This datasheet also covers the AT4 variant, as both devices belong to the same at-41435 family and are provided as variant models within a single manufacturer datasheet.

General Description

Hewlett-Packard’s AT-41435 is a general purpose NPN bipolar transistor that offers excellent high frequency performance.

The AT-41435 is housed in a cost effective surface mount 100 mil micro-X package.

Key Features

  • Low Noise Figure: 1.7 dB Typical at 2.0␣ GHz 3.0 dB Typical at 4.0␣ GHz.
  • High Associated Gain: 14.0 dB Typical at 2.0␣ GHz 10.0 dB Typical at 4.0␣ GHz.
  • High Gain-Bandwidth Product: 8.0 GHz Typical fT.
  • Cost Effective Ceramic Microstrip Package finger interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AT4-1435.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AT41435
Manufacturer Hewlett-Packard
File Size 56.45 KB
Description AT-41435
Datasheet download datasheet AT41435 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Up to 6 GHz Low Noise Silicon␣ Bipolar Transistor Technical Data AT-41435 Features • Low Noise Figure: 1.7 dB Typical at 2.0␣ GHz 3.0 dB Typical at 4.0␣ GHz • High Associated Gain: 14.0 dB Typical at 2.0␣ GHz 10.0 dB Typical at 4.0␣ GHz • High Gain-Bandwidth Product: 8.0 GHz Typical fT • Cost Effective Ceramic Microstrip Package finger interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 Ω at 1 GHz, makes this device easy to use as a low noise amplifier.