HGT1S3N60C3DS igbt equivalent, ufs series n-channel igbt.
* 6A, 600V at TC = 25oC
* 600V Switching SOA Capability
* Typical Fall Time . . . . . . . . . . . . . . 130ns at TJ = 150oC
* Short Circuit Rating
* L.
operating at moderate frequencies where low conduction losses are essential.
PACKAGING AVAILABILITY PART NUMBER HGTP3N60.
The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss.
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