RFG30P05
Description
The RFG30P05, RFP30P05, RF1S30P05, and RF1S30P05SM P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance.
Key Features
- 30A, 50V
- rDS(ON) = 0.065Ω
- Temperature Compensating PSPICE Model
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- +175oC Operating Temperature
