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RF1S70N06 Datasheet N-channel Enhancement-mode Power MOSFETs

Manufacturer: Harris

Overview: SEMICONDUCTOR RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM December 1995 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power.

Datasheet Details

Part number RF1S70N06
Manufacturer Harris
File Size 65.85 KB
Description N-Channel Enhancement-Mode Power MOSFETs
Datasheet RF1S70N06-Harris.pdf

General Description

The RFG70N06, RFP70N06, RF1S70N06 and RF1S70N06SM are N-channel power MOSFETs manufactured using the MegaFET process.

This process, which uses

Key Features

  • 70A, 60V.
  • rDS(on) = 0.014Ω.
  • Temperature Compensated PSPICE Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve (Single Pulse).
  • +175oC Operating Temperature Packages DRAIN (BOTTOM SIDE METAL) JEDEC STYLE TO-247 SOURCE DRAIN GATE.

RF1S70N06 Distributor

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Fairchild Semiconductor Logo RF1S70N06 70A/ 60V/ Avalanche Rated/ N-Channel Enhancement-Mode Power MOSFETs Fairchild Semiconductor
Fairchild Semiconductor Logo RF1S70N06SM 70A/ 60V/ Avalanche Rated/ N-Channel Enhancement-Mode Power MOSFETs Fairchild Semiconductor
Intersil Corporation Logo RF1S70N06SM 70A/ 60V/ 0.014 Ohm/ N-Channel Power MOSFETs Intersil Corporation

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