RF1S70N06 mosfets equivalent, n-channel enhancement-mode power mosfets.
* 70A, 60V
* rDS(on) = 0.014Ω
* Temperature Compensated PSPICE Model
* Peak Current vs Pulse Width Curve
* UIS Rating Curve (Single Pulse)
* +175o.
such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated d.
The RFG70N06, RFP70N06, RF1S70N06 and RF1S70N06SM are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outsta.
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