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RF1S70N06 Datasheet, Harris

RF1S70N06 mosfets equivalent, n-channel enhancement-mode power mosfets.

RF1S70N06 Avg. rating / M : 1.0 rating-11

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RF1S70N06 Datasheet

Features and benefits


* 70A, 60V
* rDS(on) = 0.014Ω
* Temperature Compensated PSPICE Model
* Peak Current vs Pulse Width Curve
* UIS Rating Curve (Single Pulse)
* +175o.

Application

such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated d.

Description

The RFG70N06, RFP70N06, RF1S70N06 and RF1S70N06SM are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outsta.

Image gallery

RF1S70N06 Page 1 RF1S70N06 Page 2 RF1S70N06 Page 3

TAGS

RF1S70N06
N-Channel
Enhancement-Mode
Power
MOSFETs
RF1S70N03
RF1S70N03SM
RF1S70N06SM
Harris

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