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RF1S70N03 - Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

Description

The RFP70N03, RF1S70N03, and RF1S70N03SM N-Channel power MOSFETs are manufactured using the MegaFET process.

This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.

Features

  • 70A, 30V.
  • rDS(ON) = 0.010Ω.
  • Temperature Compensating PSPICE Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve (Single Pulse).
  • +175oC Operating Temperature.

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Datasheet preview – RF1S70N03

Datasheet Details

Part number RF1S70N03
Manufacturer Harris
File Size 588.09 KB
Description Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
Datasheet download datasheet RF1S70N03 Datasheet
Additional preview pages of the RF1S70N03 datasheet.

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Full PDF Text Transcription

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SEMICONDUCTOR RFP70N03, RF1S70N03, RF1S70N03SM December 1995 70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Features • 70A, 30V • rDS(ON) = 0.010Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve (Single Pulse) • +175oC Operating Temperature Description The RFP70N03, RF1S70N03, and RF1S70N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors.
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