RF1S50N06 mosfets equivalent, avalanche rated n-channel enhancement-mode power mosfets.
* 50A, 60V
* rDS(ON) = 0.022Ω
* Temperature Compensating PSPICE Model
* Peak Current vs Pulse Width Curve
* UIS Rating Curve
* +175oC Operating Te.
such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated .
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DRAIN (BOTTOM SIDE METAL)
JEDEC STYLE TO-247 SOURCE DRAIN GATE
The RFG50N06, RFP50N06, RF1S50N06, and RF1S50N06SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those.
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