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RF1S30P05SM - P-Channel Enhancement-Mode Power MOSFET

This page provides the datasheet information for the RF1S30P05SM, a member of the RF1S30P05 P-Channel Enhancement-Mode Power MOSFET family.

Description

The RFG30P05, RFP30P05, RF1S30P05, and RF1S30P05SM P-Channel power MOSFETs are manufactured using the MegaFET process.

This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance.

Features

  • 30A, 50V.
  • rDS(ON) = 0.065Ω.
  • Temperature Compensating PSPICE Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • +175oC Operating Temperature.

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Datasheet preview – RF1S30P05SM

Datasheet Details

Part number RF1S30P05SM
Manufacturer Harris
File Size 98.94 KB
Description P-Channel Enhancement-Mode Power MOSFET
Datasheet download datasheet RF1S30P05SM Datasheet
Additional preview pages of the RF1S30P05SM datasheet.

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Full PDF Text Transcription

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SEMICONDUCTOR RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM December 1995 30A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs Features • 30A, 50V • rDS(ON) = 0.065Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • +175oC Operating Temperature Description The RFG30P05, RFP30P05, RF1S30P05, and RF1S30P05SM P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.
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