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MUR8100E Datasheet, Harris

MUR8100E diodes equivalent, 700v - 1000v ultrafast diodes.

MUR8100E Avg. rating / M : 1.0 rating-13

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MUR8100E Datasheet

Features and benefits


* Ultrafast with Soft Recovery Characteristic (tRR < 75ns)
* +175 C Rated Junction Temperature
* Reverse Voltage Up to 1000V
* Avalanche Energy Rated o A.

Application


* Switching Power Supply
* Power Switching Circuits
* General Purpose Symbol K Description MUR870E, MUR880.

Description

MUR870E, MUR880E, MUR890E, MUR8100E and RUR870, RUR880, RUR890, RUR8100 are ultrafast dual diodes (tRR < 75ns) with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epit.

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TAGS

MUR8100E
700V
1000V
Ultrafast
Diodes
Harris

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