IRFBC40 mosfets equivalent, n-channel power mosfets.
* 6.2A and 5.4A, 600V
* rDS(ON) = 1.2Ω and 1.6Ω
* Repetitive Avalanche Energy Rated
* Simple Drive Requirements
* Ease of Paralleling
* Related Li.
such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar swi.
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power.
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