IRF821, IRF820 Datasheet - Harris

IRF821 N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi.

IRF821 Features

* 2.2A and 2.5A, 450V and 500V

* rDS(ON) = 3.0Ω and 4.0Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literatur

IRF820-Harris.pdf

IRF821 Datasheet Preview — This datasheet PDF includes multiple part numbers: IRF821, IRF820. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IRF821, IRF820

Manufacturer:

Harris

File Size:

44.37 KB

Description:

N-channel power mosfets.

Note:

This datasheet PDF includes multiple part numbers: IRF821, IRF820.
Please refer to the document for exact specifications by model.

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IRF821 IRF820 N-Channel Power MOSFETs Harris

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