IRF541, IRF540 Datasheet - Harris

IRF541 N-Channel Power MOSFET

These are N-Channel enhancement mode silicon gate power ﬁeld eff ect tr ansistors. The y are adv anced po wer MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdo wn avalanche mode of operation. All of these po wer MOSFETs are designed f or applications suc.

IRF541 Features

* 25A and 28A, 80V and 100V

* rDS(ON) = 0.077Ω and 0.100Ω

* Single Pulse Avalanche Energy Rated

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334 “Guidelines for Soldering Surfac

IRF540-Harris.pdf

IRF541 Datasheet Preview — This datasheet PDF includes multiple part numbers: IRF541, IRF540. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IRF541, IRF540

Manufacturer:

Harris

File Size:

142.43 KB

Description:

N-channel power mosfet.

Note:

This datasheet PDF includes multiple part numbers: IRF541, IRF540.
Please refer to the document for exact specifications by model.

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IRF541 IRF540 N-Channel Power MOSFET Harris

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