IRF541 mosfets equivalent, n-channel power mosfets.
* 25A and 28A, 80V and 100V
* rDS(ON) = 0.077Ω and 0.100Ω
* Single Pulse Avalanche Energy Rated
* Nanosecond Switching Speeds
* Linear Transfer Charac.
such as s witching regulators, switching convertors, motor dr ivers, relay drivers, and dr ivers for high po wer bipolar.
These are N-Channel enhancement mode silicon gate power field eff ect tr ansistors. The y are adv anced po wer MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdo wn avalanche mode of operation. All of these.
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