Description
These are N-Channel power MOSFETs manufactured using the MegaFET process.
This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.
Features
- 45A, 30V.
- rDS(ON) = 0.022Ω.
- Temperature Compensating PSPICE Model.
- Can be Driven Directly from CMOS, NMOS, and TTL Circuits.
- Peak Current vs Pulse Width Curve.
- UIS Rating Curve.
- 175oC Operating Temperature.
- Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”.