HMN12816D - Non-Volatile SRAM MODULE 2Mbit

The HMN12816D 128K x 16 nonvolatile SRAM’s are 2,097,152-bit fully static, nonvolatile SRAM’s, organized as 131,072 words by 16 bits.

Each NVSRAM has a self contained lithium energy source and control circuitry which constantly monitors Vcc for an out-of-tolerance condition.

• w Access time : 70, 85, 120, 150ns w High-density design : 256KByte Design w Battery internally isolated until power is applied w Industry-standard 40-pin 128K x 16 pinout w Unlimited write cycles w Data retention in the absence of VCC w 10-years minimum data retention in absence of power w Automatic write-protection during power-up/power-down cycles w Data is automatically protected during power loss w Conventional SRAM operation; unlimited write cycles PIN.