Datasheet Summary
HYG046N04LQ1D/U/V
N-Channel Enhancement Mode MOSFET
Feature
- 40V/75A RDS(ON)= 4.4mΩ(typ.)@VGS = 10V RDS(ON)= 6.1mΩ(typ.)@VGS = 4.5V
- 100% Avalanche Tested
- Reliable and Rugged
- Halogen Free and Green Devices Available
(RoHS pliant)
Pin Description
GDS TO-252-2L
TO-251-3L
TO-251-3S
Applications
- Switching Application
- Power Management for DC/DC
- Battery Protection
Ordering and Marking Information
N-Channel MOSFET
G046N04L
XXXYWXXXXX
G046N04L
XXXYWXXXXX
G046N04L
XXXYWXXXXX
Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S
Date Code XXXYWXXXXX
Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plateTermiNation...