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HYG046N04LQ1V - N-Channel MOSFET

This page provides the datasheet information for the HYG046N04LQ1V, a member of the HYG046N04LQ1D N-Channel MOSFET family.

Datasheet Summary

Description

GDS TO-252-2L GDS GDS TO-251-3L TO-251-3S Applications Switching Application Power Management for DC/DC Battery Protection Ordering and Marking Information N-Channel MOSFET D G046N04L XXXYWXXXXX U G046N04L XXXYWXXXXX V G046N04L XXXYWXXXXX Package Code D: TO-252-2L U: TO-

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Datasheet Details

Part number HYG046N04LQ1V
Manufacturer HUAYI
File Size 469.52 KB
Description N-Channel MOSFET
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HYG046N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  40V/75A RDS(ON)= 4.4mΩ(typ.)@VGS = 10V RDS(ON)= 6.1mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant) Pin Description GDS TO-252-2L GDS GDS TO-251-3L TO-251-3S Applications  Switching Application  Power Management for DC/DC  Battery Protection Ordering and Marking Information N-Channel MOSFET D G046N04L XXXYWXXXXX U G046N04L XXXYWXXXXX V G046N04L XXXYWXXXXX Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code XXXYWXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.
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