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HYG046N04LQ1U Datasheet N-Channel MOSFET

Manufacturer: HUAYI

Overview: HYG046N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  40V/75A RDS(ON)= 4.4mΩ(typ.)@VGS = 10V RDS(ON)= 6.1mΩ(typ.)@VGS = 4.

Download the HYG046N04LQ1U datasheet PDF. This datasheet also includes the HYG046N04LQ1D variant, as both parts are published together in a single manufacturer document.

General Description

GDS TO-252-2L GDS GDS TO-251-3L TO-251-3S Applications  Switching Application  Power Management for DC/DC  Battery Protection Ordering and Marking Information N-Channel MOSFET D G046N04L XXXYWXXXXX U G046N04L XXXYWXXXXX V G046N04L XXXYWXXXXX Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code XXXYWXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish;

which are fully compliant with RoHS.

HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

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