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HGH20N120A Datasheet, HUASHAN ELECTRONIC

HGH20N120A transistor equivalent, n-channel enhancement mode field effect transistor.

HGH20N120A Avg. rating / M : 1.0 rating-12

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HGH20N120A Datasheet

Features and benefits

TO-3P
* Low saturation voltage, Vce(on)(typ)=2.3V@Vge=15V
* High input impedance
* Field stop trench technology offer superior conduction and switching perf.

Application


* Induction heating and Microwave oven
* Soft switching applications █ Features TO-3P
* Low saturation vol.

Description

Collector to Emitter Voltage Gate to Emitter Voltage Ratings 1200 ±30 Units V V Collector Current(TC = 25℃) IC Collector Current(TC = 100℃) 40 20 A A ICM (1) Pulsed Collector Current 80 A IF Diode continuous Forward current (TC = 100℃) 15 .

Image gallery

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TAGS

HGH20N120A
N-Channel
Enhancement
Mode
Field
Effect
Transistor
HUASHAN ELECTRONIC

Manufacturer


HUASHAN ELECTRONIC

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