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HGH20N120A Datasheet HUASHAN ELECTRONIC

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HUASHAN ELECTRONIC · HGH20N120A File Size : 0.98MB · 1 hits

Features and Benefits

TO-3P
• Low saturation voltage, Vce(on)(typ)=2.3V@Vge=15V
• High input impedance
• Field stop trench technology offer superior conduction and switching performances,
• High speed switching █ Absolute Maximum Ratings 1―Gate,G 2―Collector,C 3―Emitter,E Symbol VCES VGES Description Collector to Em.

HGH20N120A HGH20N120A HGH20N120A
TAGS
N-Channel
Enhancement
Mode
Field
Effect
Transistor
HGH20N120A
HGH25N120A
HG-0111
Stock and Price
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