HGH20N120A
Key Features
- Low saturation voltage, Vce(on)(typ)=2.3V@Vge=15V
- High input impedance
- Field stop trench technology offer superior conduction and switching performances,
- High speed switching
- Part: HGH20N120A
- Description: N-Channel Enhancement Mode Field Effect Transistor
- Category: Transistor
- Manufacturer: HUASHAN ELECTRONIC
- Size: 0.98 MB