HFP60N06 transistor equivalent, n-channel enhancement mode field effect transistor.
* 60A, 60V(See Note), RDS(on) <11.5mVΩ@VGS = 10 V
* Fast switching
* 100% avalanche tested
* Minimize input capacitance and gate charge
* Exceptional .
* Servo motor control.
* Power MOSFET gate drivers.
* DC/DC converters
* Other switching applications.
█.
Image gallery
TAGS
Download (Size : 753.24KB)