Datasheet4U Logo Datasheet4U.com

HFP5N80 - N-Channel Enhancement Mode Field Effect Transistor

Datasheet Summary

Description

These are N-Channel enhancement mode silicon gate power field effect transistors.

Features

  • s.
  • 4.8A, 800V(See Note), RDS(on).

📥 Download Datasheet

Datasheet preview – HFP5N80

Datasheet Details

Part number HFP5N80
Manufacturer HUASHAN ELECTRONIC
File Size 656.27 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet HFP5N80 Datasheet
Additional preview pages of the HFP5N80 datasheet.

📁 Similar Datasheet

Other Datasheets by HUASHAN ELECTRONIC
  • HFP50N06V - N-Channel Enhancement Mode Field Effect Transistor
  • HFP13N10 - N-Channel Enhancement Mode Field Effect Transistor
  • HFP13N50 - N-Channel Enhancement Mode Field Effect Transistor
  • HFP15N06 - N-Channel Enhancement Mode Field Effect Transistor
  • HFP17N10 - N-Channel Enhancement Mode Field Effect Transistor
  • HFP4N65 - N-Channel Enhancement Mode Field Effect Transistor
  • HFP60N06 - N-Channel Enhancement Mode Field Effect Transistor
  • HFP70N03V - N-Channel Enhancement Mode Field Effect Transistor

Full PDF Text Transcription

Click to expand full text
Shantou Huashan Electronic Devices Co.,Ltd. HFP5N80 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode . These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. █ Features • 4.8A, 800V(See Note), RDS(on) <2.
Published: |