HFP5N80
Overview
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode .
- 4.8A, 800V(See Note), RDS(on) <2.6Ω@VGS = 10 V
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Equivalent Type:FQP5N80
